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Metal-organic chemical liquid deposited (110)-preferred LaNiO3 buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric films
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References 9 · Cited by 5
Research works printed but not linked: 8
- Mensur Alkoy, 2005, Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electric properties of PbZrO3 thin films prepared by sol–gel process, Jap. J. Appl. Phys., 44, 6654, 10.1143/JJAP.44.6654 · doi:10.1143/jjap.44.6654
- Xu, 2000, Ferroelectric and antiferroelectric films for microelectromechanical systems applications, Thin Solid Films, 377–378, 712, 10.1016/S0040-6090(00)01322-5 · doi:10.1016/s0040-6090(00)01322-5
- Zhai, 2003, Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films, J. Phys.: Condens. Matter., 15, 963, 10.1088/0953-8984/15/6/323 · doi:10.1088/0953-8984/15/6/323
- Miyake, 2001, Characteristics of oriented LaNiO3 thin films fabricated by the sol–gel method, J. Eur. Ceram. Soc., 21, 1525, 10.1016/S0955-2219(01)00056-5 · DOI
- Wang, 2005, Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition, J. Cryst. Growth, 277, 450, 10.1016/j.jcrysgro.2005.01.099 · DOI
- Bao, 2001, Improved electric properties of (Pb,La)TiO3 thin films using compositionally and structurally compatiable LaNiO3 thin films as bottom electrodes, Appl. Phys. Lett., 78, 3268, 10.1063/1.1375831 · DOI
- Yu, 2004, Optical and electrical properties hog highly (100)-oriented PbZr1−xTixO3 thin films on the LaNiO3 buffer layer, J. Appl. Phys., 96, 2792, 10.1063/1.1775305 · DOI
- Wang, 2005, The effect of LaNiO3 electrode thickness on ferroelectric and dielectric properties of (100) oriented Pb0.53Ti0.47O3 films, J. Cryst. Growth, 284, 184, 10.1016/j.jcrysgro.2005.07.014 · DOI
Metadata
- Authors
- Hao, X.-H., Zhai, J.-W., & Yao, X.
- Affiliations
- Tongji University (CN)
- ORCID
- Yao, Xi
- Venue
- Ceramics International
- Publisher
- Elsevier BV
- Published
- 2008-05
- Volume
- 34
- Issue
- 4
- Pages
- 1007-1010
- ISSN
- 0272-8842 (ISSN-L)
- OpenAlex
- W2018264484
- Cited by
- 5
- References
- 9
- Citations by year
- 2024: 1 · 2018: 1 · 2016: 1 · 2015: 1 · 2014: 1
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.elsevier.com/tdm/userlicense/1.0/ (tdm)
- Locations
- Ceramics International (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- LaNiO3 buffer layer, antiferroelectric thin films, (110) preferred orientation, sheet resistance, annealing temperature, sol-gel synthesis, SiO2/Si substrate, crystallinity, microstructure, electrical properties
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- CoChat. (2026). Citation check: Metal-organic chemical liquid deposited (110)-preferred LaNiO3 buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric films. https://app.cochat.ai/papers/10.1016/j.ceramint.2007.09.068
- The paper
- Hao, X.-H., Zhai, J.-W., & Yao, X. (2008). Metal-organic chemical liquid deposited (110)-preferred LaNiO3 buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric films. Ceramics International. https://doi.org/10.1016/j.ceramint.2007.09.068
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
