Characterization of HfO 2 -based devices with indication of second order memristor effects
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HfO2 has very low thermal conductivity compared to other metal oxides such as TiO2 and Al2O3 while showing stable resistive switching characteristics.
“HfO 2 has very low thermal conductivity compared to other metal oxides such as TiO 2 and Al 2 O 3 while showing stable resistive switching characteristics.38”
From Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor crossbar array (2023) · cites this paper as [38]
The Data analysis and discussion section (page unavailable) reports more than 100 million switching cycles under specified pulse conditions, supporting durable resistive switching in the studied HfO2 devices. It does not report HfO2’s thermal conductivity or compare it with TiO2 and Al2O3, so that part of the claim is unsupported. (LLM, conf=0.86)
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Cites
Kim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00697 · Cited by 603 · see citing works
High-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574 · see citing works
Du, C., Ma, W., Chang, T., Sheridan, P., & Lu, W. D. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201501427 · Cited by 444 · see citing works
Schindler, C., Staikov, G., & Waser, R. (2009) · Applied Physics Letters · doi:10.1063/1.3077310 · Cited by 307 · see citing works
Flagged first, then by citations
Research works printed but not linked: 7
- H.S.P. Wong, H.Y. Lee, S. Yu, Y.S. Chen, Y. Wu, P.S. Chen, B. Lee, F.T. Chen, M.J. Tsai, Proc. IEEE 100 (2012) 1951.
- H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien, M.-J. Tsai, in:, 2008 IEEE Int. Electron Devices Meet., IEEE, 2008, pp. 1-4.
- U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli, 2007 IEEE Int. Electron Devices Meet. (2007) 775.
- U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, IEEE Trans. Electron Devices 56 (2009) 193.
- P. Lorenzi, Emerging Resistive Switching Memories and Neuromorphic Applications, PhD Thesis, Sapienza, University of Rome, 2017.
- D. Ielmini, F. Nardi, S. Balatti, IEEE Trans. Electron Devices 59 (2012) 2049.
- A. Adamatzky, L.O. Chua, Memristor Networks, Springer International Publishing, 2014.
Cited by
Sorted by citations
Park, S.-O., Park, T., Jeong, H., Hong, S., Seo, S., Kwon, Y., Lee, J., & Choi, S. (2023) · Nanoscale Horizons · doi:10.1039/d3nh00121k · Cited by 31 · see citing works
- Authors
- Rodriguez-Fernandez, A., Cagli, C., Perniola, L., Miranda, E., & Suñé, J.
- Affiliations
- Universitat Autònoma de Barcelona (ES)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Corresponding author
- Suñé, J.
- Venue
- Microelectronic Engineering
- Publisher
- Elsevier BV
- Published
- 2018-08
- Volume
- 195
- Pages
- 101-106
- ISSN
- 0167-9317 (ISSN-L)
- OpenAlex
- W2795639749
- Cited by
- 22
- References
- 4
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 5 · 2022: 6 · 2021: 4 · 2020: 3 · 2019: 1 · 2018: 1
- FWCI
- 0.86
- Type
- journal article
- Language
- en
- Open access
- green
- ddd.uab.cat
- Licence
- cc-by-nc-nd
- www.elsevier.com/tdm/userlicense/1.0/ (tdm)
- Locations
- Microelectronic Engineering (publishedVersion)
- Dipòsit Digital de Documents de la UAB (Universitat Autònoma de Barcelona) (submittedVersion, cc-by-nc-nd)
- LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Científicas) (submittedVersion, cc-by-nc-nd)
- Funders
- ENIAC WAKeMeUP EU
- MINECO (TEC2017-84321-C4-4-R)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- resistive switching, memristors, hafnium oxide, on/off resistance ratio, reset voltage, memory effects
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