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Cited by 31Advancements in Semiconductor Devices and Circuit DesignGaN-based semiconductor devices and materialsAnalytical Chemistry and Sensors

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Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor

Sharma, Swati, Nath, Vandana, Deswal, S.S., Gupta, R.S.·2022·Microelectronics Journal
DOI 10.1016/j.mejo.2022.105599
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Citations

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Research works printed but not linked: 34

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  8. Latha, 2020, Dielectric modulated Schottky barrier TFET for the application as label-free biosensor, Silicon, 12, 2673, 10.1007/s12633-019-00363-7 · DOI
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  10. Kumari, 2021, Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor, Appl. Phys. A, 127, 1, 10.1007/s00339-020-04256-0 · DOI
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Metadata

Authors
Sharma, S., Nath, V., Deswal, S. S., & Gupta, R. S.
Affiliations
Guru Gobind Singh Indraprastha University (IN)
Corresponding author
Sharma, Swati
ORCID
Venue
Microelectronics Journal
Publisher
Elsevier BV
Published
2022-11
Volume
129
Pages
105599
ISSN
1879-2391 (ISSN-L)
DOI
10.1016/j.mejo.2022.105599
OpenAlex
W4301606140
Cited by
31
References
4
Citations by year
2026: 2 · 2025: 9 · 2024: 10 · 2023: 10
FWCI
1.99
Type
journal article
Language
en
Open access
closed
Licence
Locations
Microelectronics Journal (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Chemistry › Analytical Chemistry › Analytical Chemistry and Sensors
Keywords
label-free biosensor, dielectric engineering, high-k dielectrics, hafnium oxide, threshold voltage, surface potential, sensitivity analysis, nanogap cavity, superposition method

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