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Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor

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Shishiyanu, Sergiu T., Shishiyanu, Teodor S., Lupan, Oleg I.·2005·Sensors and Actuators B: Chemical

Abstract

NO 2 gas sensor was fabricated by successive ionic layer adsorption and reaction (SILAR) technique and rapid photothermal processing (RPP) of the Sn-doped ZnO film. The experimental results shows that tin doping of zinc oxide thin films improve the sensor element sensitivity to 1.5 ppm NO 2 in air and downshift the operating temperature. The influence of variation of Sn concentration in the chemical bath and the RPP temperature on NO 2 sensitivity of thin film sensor elements was investigated in this work. Higher sensitivity was obtained at 5–10 at.% tin concentration in the solution of ions and RPP temperature of 550–650 °C. Increasing the Sn concentration in doped ZnO samples more than 10 at.% as well as decreasing the oxygen partial pressure leads to the NO 2 gas sensitivity decrease. It looks promising to use the inexpensive tin-doped zinc oxide thin films obtained by SILAR method and RPP in smart gas sensing devices that are able to recognize gas species in low concentrations and are demanded for continuous environmental monitoring.

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Metadata

Authors
Shishiyanu, S. T., Shishiyanu, T. S., & Lupan, O. I.
Venue
Sensors and Actuators B: Chemical
Publisher
Elsevier BV
Published
2005-05
Volume
107
Issue
1
Pages
379-386
ISSN
0925-4005 (ISSN-L)
OpenAlex
W2018803765
Cited by
487
References
0
FWCI
6.87
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor. https://app.cochat.ai/papers/10.1016/j.snb.2004.10.030
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Shishiyanu, S. T., Shishiyanu, T. S., & Lupan, O. I. (2005). Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor. Sensors and Actuators B: Chemical. https://doi.org/10.1016/j.snb.2004.10.030

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