The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.
Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation
Abstract
Abstract To gain higher efficiency than that of traditional lattice-matched solar cells, newly designed up-grown metamorphic (UMM) InGaP/InGaAs/Ge solar cells were grown on Ge substrates. The defects in UMM InGaP/InGaAs/Ge can be perfectly controlled, and thus the conversion efficiency exceeds 30%. Similarly, the radiation environment in space could also cause displacement damage in UMM solar cells, causing the degradation of electrical properties. Proton irradiation at 50 keV and 150 keV was tested on the UMM solar cells. Because the top InGaP layer is thick enough, the radiation defects are limited within the top subcell without affecting the underlying subcells. In this research, 50-keV protons cause more serious degradation of short-circuit current, whereas 150-keV protons cause more serious degradation of open-circuit voltage. The difference may be related to the distribution of defects, which is calculated by The Stopping and Range of Ions in Matter (SRIM). Defects in the junction region would cause the decrease in voltage, whereas defects in the surface region could cause degradation of current. As a comparison, lattice-matched GaInP/GaAs/Ge solar cells were also irradiated by low-energy protons. The degradation under 150-keV protons is more serious because the damage peak lies in the middle GaAs layer, which has poor radiation resistance. The degradation under 70-keV proton irradiation proves that a thinner GaInP layer improves the radiation resistance. It is notable that the degradation of short-circuit current and maximum power is influenced by the equivalent displacement damage dose (DDD), but this is not accurate for open-circuit voltage. The artifact signals at 700–750 nm after 50-keV proton irradiation indicate the decrease in shunt resistance of the InGaP subcell during proton irradiation.
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Research works printed but not linked: 2
- Aierken, 2018, Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells, Sol. Energy Mater. Sol. Cells, 185, 36, 10.1016/j.solmat.2018.04.035 · DOI
- M. Yamaguchi, T. Takamoto, A. Khan, et al. Consideration for improving radiation-resistance of InGaP/GaAs and InGaP/X/Ge multi-junction solar cells, in: Proceedings of World Conference on Photovoltaic Energy Conversion, IEEE Xplore, Vol.1, 2003, pp. 685–688.
Cited by
Space Microgrids for Future Manned Lunar Bases: A Review
Saha, D., Bazmohammadi, N., Raya-Armenta, J. M., Bintoudi, A. D., Lashab, A., Vasquez, J. C., & Guerrero, J. M. (2021) · IEEE Open Access Journal of Power and Energy · doi:10.1109/oajpe.2021.3116674 · Cited by 64
Metadata
- Authors
- Hongliang, G., Linfeng, S., Qiang, S., Qiming, Z., Yiyong, W., Jingdong, X., Bin, G., & Yanqing, Z.
- Affiliations
- Harbin Institute of Technology (CN)
- Venue
- Solar Energy Materials and Solar Cells
- Publisher
- Elsevier BV
- Published
- 2019-03
- Volume
- 191
- Pages
- 399-405
- ISSN
- 0927-0248 (ISSN-L)
- OpenAlex
- W2904468799
- Cited by
- 27
- References
- 20
- Citations by year
- 2026: 2 · 2025: 4 · 2024: 3 · 2023: 6 · 2022: 5 · 2021: 5 · 2020: 2
- FWCI
- 0.67
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.elsevier.com/tdm/userlicense/1.0/ (tdm)
- Locations
- Solar Energy Materials and Solar Cells (publishedVersion)
- Funders
- National Natural Science Foundation of China (11475049)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › solar cell performance optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
- Physical Sciences › Energy › Nuclear Energy and Engineering › Advanced Energy Technologies and Civil Engineering Innovations
- Keywords
- low-energy proton irradiation, radiation damage, displacement damage, short-circuit current degradation, open-circuit voltage degradation, SRIM simulation, shunt resistance, space radiation environment
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- CoChat. (2026). Citation check: Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation. https://app.cochat.ai/papers/10.1016/j.solmat.2018.11.033
- The paper
- Hongliang, G., Linfeng, S., Qiang, S., Qiming, Z., Yiyong, W., Jingdong, X., Bin, G., & Yanqing, Z. (2019). Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation. Solar Energy Materials and Solar Cells. https://doi.org/10.1016/j.solmat.2018.11.033
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