Cited by 183Thermal properties of materialsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Thermal conductivity of GaN crystals in 4.2–300 K range

Jeżowski, A., Danilchenko, B.A., Boćkowski, M., Grzegory, I., Krukowski, S., Suski, T., Paszkiewicz, T.·2003·Solid State Communications

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Crossref · 10.1016/s0038-1098(03)00629-x

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References 17 · Cited by 183

Authors
Jeżowski, A., Danilchenko, B. A., Boćkowski, M., Grzegory, I., Krukowski, S., Suski, T., & Paszkiewicz, T.
Affiliations
  • National Academy of Sciences of Ukraine (UA)
  • Institute of High Pressure Physics (PL)
  • University of Rzeszów (PL)
Corresponding author
Paszkiewicz, T.
Venue
Solid State Communications
Publisher
Elsevier BV
Published
2003-10
Volume
128
Issue
2-3
Pages
69-73
ISSN
0038-1098 (ISSN-L)
OpenAlex
W1977761535
Cited by
183
References
17
Citations by year
2026: 8 · 2025: 14 · 2024: 15 · 2023: 8 · 2022: 10 · 2021: 9 · 2020: 13 · 2019: 12 · 2018: 6 · 2017: 9 · 2016: 5 · 2015: 10 · 2014: 11 · 2013: 11 · 2012: 7
FWCI
2.54
Type
journal article
Language
en
Open access
closed
Locations
Solid State Communications (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
gallium nitride, thermal conductivity, low-temperature thermal transport, Umklapp scattering, point defects, magnesium doping, n-type GaN, Debye temperature, phonon scattering, thermal resistance

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