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Cited by 54Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsFerroelectric and Negative Capacitance Devices

Ferroelectricity in Pb1+δZrO3 Thin Films

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Gao, Ran, Reyes-Lillo, Sebastian E., Xu, Ruijuan, Dasgupta, Arvind, Dong, Yongqi, Dedon, Liv R., Kim, Jieun, Saremi, Sahar +5 more·2017·Chemistry of Materials
DOI 10.1021/acs.chemmater.7b02506
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Abstract

Antiferroelectric PbZrO 3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO 3 thin films and understanding the chemistry–structure coupling in Pb 1+δ ZrO 3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb 1+δ ZrO 3 films are synthesized via pulsed-laser deposition. Although no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO 3 and Pb 1.1 ZrO 3 heterostructures remain intrinsically antiferroelectric, the Pb 1.2 ZrO 3 heterostructures exhibit a hysteresis loop indicative of ferroelectric response. Further X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO 3 and Pb 1.1 ZrO 3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb 1.2 ZrO 3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite Pb Zr defects, which drive the Pb 1.2 ZrO 3 heterostructures to a ferroelectric phase with R 3 c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.

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  • PZO films of similar thicknesses grown epitaxially with PLD show polarization values ~45 μC/cm2 compared to PHO showing ~30 μC/cm2.

    “PZO films of similar thicknesses grown epitaxially with pulsed-laser deposition show polarization values ∼45 μC/cm 240 compared to PHO showing ∼30 μC/cm 2”

    From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [40]

    The Results and Discussion report a saturated polarization of approximately 50 μC/cm² for PbZrO₃ films, reasonably close to the cited ~45 μC/cm². The Introduction describes laser-based growth conditions for these films. Our copy does not report a PHO polarization value or establish the claimed thickness comparison. (LLM, conf=0.85)

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Authors
Gao, R., Reyes-Lillo, S. E., Xu, R., Dasgupta, A., Dong, Y., Dedon, L. R., Kim, J., Saremi, S., Chen, Z., Serrao, C. R., Zhou, H., Neaton, J. B., & Martin, L. W.
Affiliations
  • University of California, Berkeley (US)
  • University of Science and Technology of China (CN)
  • Lawrence Berkeley National Laboratory (US)
  • Argonne National Laboratory (US)
  • Kavli Energy NanoScience Institute (US)
Corresponding author
Martin, Lane W.
ORCID
Venue
Chemistry of Materials
Publisher
American Chemical Society (ACS)
Published
2017-07-24
Volume
29
Issue
15
Pages
6544-6551
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
DOI
10.1021/acs.chemmater.7b02506
OpenAlex
W2735105043
Cited by
54
References
0
Citations by year
2026: 5 · 2025: 8 · 2024: 8 · 2023: 9 · 2022: 8 · 2021: 10 · 2020: 3 · 2019: 1 · 2018: 2
FWCI
0.69
Type
journal article
Language
en
Open access
Locations
  • Chemistry of Materials (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
  • eScholarship (California Digital Library) (submittedVersion)
Funders
  • Army Research Office (W911NF-14-1-0104)
  • Gordon and Betty Moore Foundation (GBMF5307)
  • Division of Graduate Education (DMR-1451219, DMR-1608938, DMR-1708615)
  • Office of International Science and Engineering (OISE-1545907)
  • Lawrence Berkeley National Laboratory (DE-AC02-05CH11231)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
PbZrO3, ferroelectricity, antiferroelectricity, cation nonstoichiometry, epitaxial growth, pulsed laser deposition, heterostructures, antisite defects, metastable phases, defect engineering, ferroelectric hysteresis

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