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Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness
Abstract
Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m –2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W –1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.
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Cited by
Perovskites for Next-Generation Optical Sources
Quan, L. N., Rand, B. P., Friend, R. H., Mhaisalkar, S. G., Lee, T.-W., & Sargent, E. H. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00107 · Cited by 983
Improving the Stability of Metal Halide Perovskite Materials and Light‐Emitting Diodes
Cho, H., Kim, Y., Wolf, C., Lee, H., & Lee, T. (2018) · Advanced Materials · doi:10.1002/adma.201704587 · Cited by 470
Perovskite Quantum Dots and Their Application in Light‐Emitting Diodes
Wang, H., Bao, Z., Tsai, H., Tang, A., & Liu, R. (2018) · Small · doi:10.1002/smll.201702433 · Cited by 355
Li, X., Yu, D., Chen, J., Wang, Y., Cao, F., Wei, Y., Wu, Y., Wang, L., Zhu, Y., Sun, Z., et al. (2017) · ACS Nano · doi:10.1021/acsnano.6b08194 · Cited by 316
Han, D., Imran, M., Zhang, M., Chang, S., Wu, X.-G., Zhang, X., Tang, J., Wang, M., Ali, S., Li, X., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b05172 · Cited by 298
Metadata
- Authors
- Li, J., Shan, X., Bade, S. G. R., Geske, T., Jiang, Q., Yang, X., & Yu, Z.
- Venue
- The Journal of Physical Chemistry Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-10-03
- Volume
- 7
- Issue
- 20
- Pages
- 4059-4066
- ISSN
- 1948-7185 (ISSN-L)
- OpenAlex
- W2523838050
- Cited by
- 199
- References
- 0
- FWCI
- 16.01
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, J., Shan, X., Bade, S. G. R., Geske, T., Jiang, Q., Yang, X., & Yu, Z. (2016). Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness. The Journal of Physical Chemistry Letters. https://doi.org/10.1021/acs.jpclett.6b01942
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