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Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness

Li, Junqiang, Shan, Xin, Bade, Sri Ganesh R., Geske, Thomas, Jiang, Qinglong, Yang, Xin, Yu, Zhibin·2016·The Journal of Physical Chemistry Letters

Abstract

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m –2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W –1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

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Metadata

Authors
Li, J., Shan, X., Bade, S. G. R., Geske, T., Jiang, Q., Yang, X., & Yu, Z.
Venue
The Journal of Physical Chemistry Letters
Published
2016-10-03
Volume
7
Issue
20
Pages
4059-4066
ISSN
1948-7185 (ISSN-L)
OpenAlex
W2523838050
Cited by
199
References
0
FWCI
16.01
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness. https://app.cochat.ai/papers/10.1021/acs.jpclett.6b01942
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Li, J., Shan, X., Bade, S. G. R., Geske, T., Jiang, Q., Yang, X., & Yu, Z. (2016). Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness. The Journal of Physical Chemistry Letters. https://doi.org/10.1021/acs.jpclett.6b01942

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