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Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors
Open accessAbstract
Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes, which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, because of the strong photogating effect, these direct-band gap, multilayer phototransistors produce ultrahigh gains of (9.8 ± 2.5) × 10(4) A/W and inferred detectivities of (3.3 ± 0.8) × 10(13) Jones, putting In2Se3 among the most sensitive 2D materials for photodetection studied to date.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Cited by
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
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Metadata
- Authors
- Island, J. O., Blanter, S. I., Buscema, M., van der Zant, H. S. J., & Castellanos-Gomez, A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-11-09
- Volume
- 15
- Issue
- 12
- Pages
- 7853-7858
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2161625722
- Cited by
- 430
- References
- 2
- FWCI
- 10.92
- Type
- journal article
- Language
- en
- Open access
- green
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- Island, J. O., Blanter, S. I., Buscema, M., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015). Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b02523
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