The DOI matches its Crossref record; 38 of the 38 references it cites were found in a registry or an index.
Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed
Open accessAbstract
Semiconducting, two-dimensional molybdenum disulfide (MoS2) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrimental and uncontrollable effects of environmental adsorbates on devices due to large surface to volume ratio. Here, we report on highly stable and high-performance monolayer and bilayer MoS2 photodetectors encapsulated with atomic layer deposited hafnium oxide. The protected devices show enhanced electronic properties by isolating them from the ambience as strong n-type doping, vanishing hysteresis, and reduced device resistance. By controlling the gate voltage the responsivity and temporal response can be tuned by several orders of magnitude with R ∼ 10-10(4) A/W and t ∼ 10 ms to 10 s. At strong negative gate voltage, the detector is operated at higher speed and simultaneously exhibits a low-bound, record sensitivity of D* ≥ 7.7 × 10(11) Jones. Our results lead the way for future application of ultrathin, flexible, and high-performance MoS2 detectors and prompt for further investigation in encapsulated transition metal dichalcogenide optoelectronics.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Ultrasensitive photodetectors based on monolayer MoS2
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., & Kis, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.100 · Cited by 5,043
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Koppens, F. H. L., Mueller, T., Avouris, P., Ferrari, A. C., Vitiello, M. S., & Polini, M. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.215 · Cited by 3,828
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Ultrasensitive solution-cast quantum dot photodetectors
Konstantatos, G., Howard, I., Fischer, A., Hoogland, S., Clifford, J., Klem, E., Levina, L., & Sargent, E. H. (2006) · Nature · doi:10.1038/nature04855 · Cited by 1,883
Self-citationMobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Few-Layer MoS2: A Promising Layered Semiconductor
Ganatra, R., & Zhang, Q. (2014) · ACS Nano · doi:10.1021/nn405938z · Cited by 1,422
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
Lee, H. S., Min, S.-W., Chang, Y.-G., Park, M. K., Nam, T., Kim, H., Kim, J. H., Ryu, S., & Im, S. (2012) · Nano Letters · doi:10.1021/nl301485q · Cited by 1,337
Cited by
Solution-processed semiconductors for next-generation photodetectors
García de Arquer, F. P., Armin, A., Meredith, P., & Sargent, E. H. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.100 · Cited by 1,529
Photogating in Low Dimensional Photodetectors
Fang, H., & Hu, W. (2017) · Advanced Science · doi:10.1002/advs.201700323 · Cited by 986
Mueller, T., & Malic, E. (2018) · npj 2D Materials and Applications · doi:10.1038/s41699-018-0074-2 · Cited by 905
Recent Progress and Future Prospects of 2D‐Based Photodetectors
Huo, N., & Konstantatos, G. (2018) · Advanced Materials · doi:10.1002/adma.201801164 · Cited by 730
Self-citationBioinspired in-sensor visual adaptation for accurate perception
Liao, F., Zhou, Z., Kim, B. J., Chen, J., Wang, J., Wan, T., Zhou, Y., Hoang, A. T., Wang, C., Kang, J., et al. (2022) · Nature Electronics · doi:10.1038/s41928-022-00713-1 · Cited by 609
Metadata
- Authors
- Kufer, D., & Konstantatos, G.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-11-02
- Volume
- 15
- Issue
- 11
- Pages
- 7307-7313
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2211067978
- Cited by
- 664
- References
- 38
- FWCI
- 20.38
- Type
- journal article
- Language
- en
- Open access
- green
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- Kufer, D., & Konstantatos, G. (2015). Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b02559
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