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Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain
Abstract
We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
2D Material Based Synaptic Devices for Neuromorphic Computing
Cao, G., Meng, P., Chen, J., Liu, H., Bian, R., Zhu, C., Liu, F., & Liu, Z. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202005443 · Cited by 382
2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications
Zhao, B., Shen, D., Zhang, Z., Lu, P., Hossain, M., Li, J., Li, B., & Duan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202105132 · Cited by 359
Metadata
- Authors
- Song, S., Keum, D. H., Cho, S., Perello, D., Kim, Y., & Lee, Y. H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-12-31
- Volume
- 16
- Issue
- 1
- Pages
- 188-193
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2218369040
- Cited by
- 530
- References
- 1
- FWCI
- 14.12
- Type
- journal article
- Language
- en
- Open access
- closed
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- Song, S., Keum, D. H., Cho, S., Perello, D., Kim, Y., & Lee, Y. H. (2016). Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b03481
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