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Cited by 530

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Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain

Song, Seunghyun, Keum, Dong Hoon, Cho, Suyeon, Perello, David, Kim, Yunseok, Lee, Young Hee·2016·Nano Letters

Abstract

We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.

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Metadata

Authors
Song, S., Keum, D. H., Cho, S., Perello, D., Kim, Y., & Lee, Y. H.
Venue
Nano Letters
Published
2015-12-31
Volume
16
Issue
1
Pages
188-193
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2218369040
Cited by
530
References
1
FWCI
14.12
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain. https://app.cochat.ai/papers/10.1021/acs.nanolett.5b03481
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Song, S., Keum, D. H., Cho, S., Perello, D., Kim, Y., & Lee, Y. H. (2016). Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b03481

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