The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
Open accessAbstract
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for optoelectronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2- and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250× more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Magnetic brightening and control of dark excitons in monolayer WSe2
Zhang, X.-X., Cao, T., Lu, Z., Lin, Y.-C., Zhang, F., Wang, Y., Li, Z., Hone, J. C., Robinson, J. A., Smirnov, D., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.105 · Cited by 445
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Withers, F., Del Pozo-Zamudio, O., Schwarz, S., Dufferwiel, S., Walker, P. M., Godde, T., Rooney, A. P., Gholinia, A., Woods, C. R., Blake, P., Haigh, S. J., Watanabe, K., Taniguchi, T., Aleiner, I. L., Geim, A. K., Fal’ko, V. I., Tartakovskii, A. I., & Novoselov, K. S.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-11-16
- Volume
- 15
- Issue
- 12
- Pages
- 8223-8228
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2150178779
- Cited by
- 278
- References
- 2
- FWCI
- 13.99
- Type
- journal article
- Language
- en
- Open access
- green
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- Withers, F., Del Pozo-Zamudio, O., Schwarz, S., Dufferwiel, S., Walker, P. M., Godde, T., Rooney, A. P., Gholinia, A., Woods, C. R., Blake, P., Haigh, S. J., Watanabe, K., Taniguchi, T., Aleiner, I. L., Geim, A. K., Fal’ko, V. I., Tartakovskii, A. I., & Novoselov, K. S. (2015). WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b03740
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