The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Abstract
Memristor, which had been predicted a long time ago (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507), was recently invented (Strukov, D. B.; et al. Nature 2008, 453, 80). The introduction of a memristor is expected to open a new era for nonvolatile memory storage, neuromorphic computing, digital logic, and analog circuit. Furthermore, several breakthroughs were made for memristive phenomena and transistors with single-layer MoS2 (Sangwan, V. K.; et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M.; et al. Nat. Mater. 2013, 12, 554. Liu, H.; et al. ACS Nano 2014, 8, 1031. Bessonov, A. A.; et al. Nat. Mater. 2015, 14, 199. Yuan, J.; et al. Nat. Nanotechnol. 2015, 10, 389). Herein, we demonstrate that 2H phase of bulk MoS2 possessed an ohmic feature, whereas 1T phase of exfoliated MoS2 nanosheets exhibited a unique memristive behavior due to voltage-dependent resistance change. Furthermore, an ideal odd-symmetric memristor with odd-symmetric I-V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches antiserially.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
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Two-dimensional atomic crystals
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Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
From Bulk to Monolayer MoS2: Evolution of Raman Scattering
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Cited by
Synthesis, stabilization and applications of 2-dimensional 1T metallic MoS 2
Shi, S., Sun, Z., & Hu, Y. H. (2018) · Journal of Materials Chemistry A · doi:10.1039/c8ta08152b · Cited by 374
Self-citationHe, H., Yang, R., Zhou, W., Huang, H., Xiong, J., Gan, L., Zhai, T., & Guo, X. (2018) · Small · doi:10.1002/smll.201800079 · Cited by 312
Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays
Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220
Memristive Crossbar Arrays for Storage and Computing Applications
Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205
Zhang, X., Jia, F., & Song, S. (2021) · Chemical Engineering Journal · doi:10.1016/j.cej.2020.127013 · Cited by 145
Metadata
- Authors
- Cheng, P., Sun, K., & Hu, Y. H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-12-17
- Volume
- 16
- Issue
- 1
- Pages
- 572-576
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2298310997
- Cited by
- 409
- References
- 27
- FWCI
- 10.75
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cheng, P., Sun, K., & Hu, Y. H. (2016). Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b04260
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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