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van der Waals Heterostructures with High Accuracy Rotational Alignment
Abstract
We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.
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Cited by
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
Cao, Y., Fatemi, V., Demir, A., Fang, S., Tomarken, S. L., Luo, J. Y., Sanchez-Yamagishi, J. D., Watanabe, K., Taniguchi, T., Kaxiras, E., et al. (2018) · Nature · doi:10.1038/nature26154 · Cited by 4,858
Self-citationTuning superconductivity in twisted bilayer graphene
Yankowitz, M., Chen, S., Polshyn, H., Zhang, Y., Watanabe, K., Taniguchi, T., Graf, D., Young, A. F., & Dean, C. R. (2019) · Science · doi:10.1126/science.aav1910 · Cited by 2,290
Self-citationFractional Chern insulators in magic-angle twisted bilayer graphene
Xie, Y., Pierce, A. T., Park, J. M., Parker, D. E., Khalaf, E., Ledwith, P., Cao, Y., Lee, S. H., Chen, S., Forrester, P. R., et al. (2021) · Nature · doi:10.1038/s41586-021-04002-3 · Cited by 523
Self-citationElectronic-structure methods for twisted moiré layers
Carr, S., Fang, S., & Kaxiras, E. (2020) · Nature Reviews Materials · doi:10.1038/s41578-020-0214-0 · Cited by 303
Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics
Ciarrocchi, A., Tagarelli, F., Avsar, A., & Kis, A. (2022) · Nature Reviews Materials · doi:10.1038/s41578-021-00408-7 · Cited by 291
Metadata
- Authors
- Kim, K., Yankowitz, M., Fallahazad, B., Kang, S., Movva, H. C. P., Huang, S., Larentis, S., Corbet, C. M., Taniguchi, T., Watanabe, K., Banerjee, S. K., LeRoy, B. J., & Tutuc, E.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-02-15
- Volume
- 16
- Issue
- 3
- Pages
- 1989-1995
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2274239480
- Cited by
- 714
- References
- 0
- FWCI
- 15.86
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kim, K., Yankowitz, M., Fallahazad, B., Kang, S., Movva, H. C. P., Huang, S., Larentis, S., Corbet, C. M., Taniguchi, T., Watanabe, K., Banerjee, S. K., LeRoy, B. J., & Tutuc, E. (2016). van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b05263
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