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Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Open access
English, Chris D., Shine, Gautam, Dorgan, Vincent E., Saraswat, Krishna C., Pop, Eric·2016·Nano Letters

Abstract

The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10(12) to 10(13) cm(-2)), and contact dimensions (20 to 500 nm). We uncover that Au deposited in ultra-high vacuum (∼10(-9) Torr) yields three times lower RC than under normal conditions, reaching 740 Ω·μm and specific contact resistivity 3 × 10(-7) Ω·cm(2), stable for over four months. Modeling reveals separate RC contributions from the Schottky barrier and the series access resistance, providing key insights on how to further improve scaling of MoS2 contacts and transistor dimensions. The contact transfer length is ∼35 nm at 300 K, which is verified experimentally using devices with 20 nm contacts and 70 nm contact pitch (CP), equivalent to the "14 nm" technology node.

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Metadata

Authors
English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C., & Pop, E.
Venue
Nano Letters
Published
2016-05-27
Volume
16
Issue
6
Pages
3824-3830
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2396859594
Cited by
554
References
1
FWCI
23.57
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. https://app.cochat.ai/papers/10.1021/acs.nanolett.6b01309
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English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C., & Pop, E. (2016). Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. Nano Letters. https://doi.org/10.1021/acs.nanolett.6b01309

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