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Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

Open access
Lloyd, David, Liu, Xinghui, Christopher, Jason W., Cantley, Lauren, Wadehra, Anubhav, Kim, Brian L., Goldberg, Bennett B., Swan, Anna K., Bunch, J. Scott·2016·Nano Letters

Abstract

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity of the peaks in the photoluminescence (PL) spectrum and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain and to find the shift rates and Grüneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron-sized areas and report evidence for the strain tuning of higher level optical transitions.

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Metadata

Authors
Lloyd, D., Liu, X., Christopher, J. W., Cantley, L., Wadehra, A., Kim, B. L., Goldberg, B. B., Swan, A. K., & Bunch, J. S.
Venue
Nano Letters
Published
2016-08-15
Volume
16
Issue
9
Pages
5836-5841
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2513056946
Cited by
624
References
37
FWCI
19.79
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2. https://app.cochat.ai/papers/10.1021/acs.nanolett.6b02615
The paper
Lloyd, D., Liu, X., Christopher, J. W., Cantley, L., Wadehra, A., Kim, B. L., Goldberg, B. B., Swan, A. K., & Bunch, J. S. (2016). Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2. Nano Letters. https://doi.org/10.1021/acs.nanolett.6b02615

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