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Cited by 181

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Memristive Synapses with Photoelectric Plasticity Realized in ZnO1–x/AlOyHeterojunction

Hu, Dan-Chun, Yang, Rui, Jiang, Li, Guo, Xin·2018·ACS Applied Materials & Interfaces

Abstract

With the end of Moore’s law in sight, new computing architectures are urgently needed to satisfy the increasing demands for big data processing. Neuromorphic architectures with photoelectric learning capability are good candidates for energy-efficient computing for recognition and classification tasks. In this work, artificial synapses based on the ZnO 1– x /AlO y heterojunction were fabricated and the photoelectric plasticity was investigated. Versatile synaptic functions such as photoelectric short-term/long-term plasticity, paired-pulse facilitation, neuromorphic facilitation, and depression were emulated based on the inherent persistent photoconductivity and volatile resistive switching characteristics of the device. It is found that the naturally formed AlO y layer provides traps for photogenerated holes, resulting in a significant persistent photoconductivity effect. Moreover, the resistive switching can be attributed to the electron trapping/detrapping at the trapping sites in the AlO y layer.

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Crossref · 10.1021/acsami.8b01036

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Metadata

Authors
Hu, D.-C., Yang, R., Jiang, L., & Guo, X.
Venue
ACS Applied Materials & Interfaces
Published
2018-02-12
Volume
10
Issue
7
Pages
6463-6470
ISSN
  • 1944-8244 (ISSN-L)
  • 1944-8252
OpenAlex
W2786940338
Cited by
181
References
7
FWCI
5.93
Type
journal article
Language
en
Open access
closed

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