Cited by 2152D Materials and ApplicationsGraphene research and applicationsCatalysis and Hydrodesulfurization Studies

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Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation

He, Zuyun, Zhao, Ran, Chen, Xiaofei, Chen, Huijun, Zhu, Yunmin, Su, Huimin, Huang, Shengxi, Xue, Jianming, Dai, Junfeng, Cheng, Shuang, Liu, Meilin, Wang, Xinwei, Chen, Yan·2018·ACS Applied Materials & Interfaces

DOI 10.1021/acsami.8b17145

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Abstract

Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS 2 as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS 2 , leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS 2 first blueshifts and then redshifts, which is likely due to the electron transfer from MoS 2 to the adsorbed O 2 at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS 2 , attributed to the modified adsorption of atomic hydrogen at the defects.

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Authors: He, Z., Zhao, R., Chen, X., Chen, H., Zhu, Y., Su, H., Huang, S., Xue, J., Dai, J., Cheng, S., Liu, M., Wang, X., & Chen, Y.
Affiliations: South China University of Technology (CN)
Peking University (CN)
China Institute of Nuclear Information & Economics, Beijing 100871, China
Southern University of Science and Technology (CN)
Pennsylvania State University (US)
Georgia Institute of Technology (US)
Corresponding author: Wang, Xinwei
Chen, Yan
ORCID: He, Zuyun
Zhao, Ran
Chen, Xiaofei
Chen, Huijun
Zhu, Yunmin
Huang, Shengxi
Xue, Jianming
Dai, Junfeng
Cheng, Shuang
Liu, Meilin
Wang, Xinwei
Chen, Yan
Venue: ACS Applied Materials & Interfaces
Publisher: American Chemical Society (ACS)
Published: 2018-11-14
Volume: 10
Issue: 49
Pages: 42524-42533
ISSN: 1944-8244 (ISSN-L)
1944-8252
DOI: 10.1021/acsami.8b17145
OpenAlex: W2901546117
Cited by: 213
References: 54
Citations by year: 2026: 14 · 2025: 26 · 2024: 43 · 2023: 26 · 2022: 35 · 2021: 28 · 2020: 22 · 2019: 19
FWCI: 6.44
Type: journal article
Language: en
Open access: closed
Locations: ACS Applied Materials & Interfaces (publishedVersion)
PubMed (publishedVersion)
Funders: Ministry of Education of the People's Republic of China (2018MS40)
International Atomic Energy Agency (21063, F11020)
Guangzhou Science and Technology Program key projects (201707010146)
National Natural Science Foundation of China (11605063)
Central Committee of the Communist Party of China
Guangdong Province (2014ZT05N200)
Topics: Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
Physical Sciences › Chemical Engineering › Catalysis › Catalysis and Hydrodesulfurization Studies
Keywords: monolayer MoS2, transition metal dichalcogenides, defect engineering, heavy ion irradiation, gold ion irradiation, sulfur vacancies, photoluminescence, hydrogen evolution reaction, electrocatalysis, defect density, oxygen adsorption, hydrogen adsorption

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Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation

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