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Halogen Etch of Ti3AlC2 MAX Phase for MXene Fabrication
Abstract
Abstract The versatile property suite of two-dimensional MXenes is driving interest in various applications, including energy storage, electromagnetic shielding, and conductive coatings. Conventionally, MXenes are synthesized by a wet-chemical etching of the parent MAX-phase in HF-containing media. The acute toxicity of HF hinders scale-up, and competing surface hydrolysis challenges control of surface composition and grafting methods. Herein, we present an efficient, room-temperature etching method that utilizes halogens (Br2, I2, ICl, IBr) in anhydrous media to synthesize MXenes from Ti3AlC2. A radical-mediated process depends strongly on the molar ratio of the halogen to MAX phase, absolute concentration of the halogen, the solvent, and temperature. This etching method provides opportunities for controlled surface chemistries to modulate MXene properties.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Ten Years of Progress in the Synthesis and Development of MXenes
Naguib, M., Barsoum, M. W., & Gogotsi, Y. (2021) · Advanced Materials · doi:10.1002/adma.202103393 · Cited by 1,257
A Review on MXene Synthesis, Stability, and Photocatalytic Applications
Murali, G., Reddy Modigunta, J. K., Park, Y. H., Lee, J.-H., Rawal, J., Lee, S.-Y., In, I., & Park, S.-J. (2022) · ACS Nano · doi:10.1021/acsnano.2c04750 · Cited by 668
Sensors-integrated organ-on-a-chip for biomedical applications
Chen, H., Luo, Z., Lin, X., Zhu, Y., & Zhao, Y. (2023) · Nano Research · doi:10.1007/s12274-023-5651-9 · Cited by 47
Metadata
- Authors
- Jawaid, A., Hassan, A., Neher, G., Nepal, D., Pachter, R., Kennedy, W. J., Ramakrishnan, S., & Vaia, R. A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2021-01-27
- Volume
- 15
- Issue
- 2
- Pages
- 2771-2777
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W3125982301
- Cited by
- 369
- References
- 1
- FWCI
- 16.42
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jawaid, A., Hassan, A., Neher, G., Nepal, D., Pachter, R., Kennedy, W. J., Ramakrishnan, S., & Vaia, R. A. (2021). Halogen Etch of Ti3AlC2 MAX Phase for MXene Fabrication. ACS Nano. https://doi.org/10.1021/acsnano.0c08630
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