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Cited by 225

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

Jia, Jingyuan, Jang, Sung Kyu, Lai, Shen, Xu, Jiao, Choi, Young Jin, Park, Jin-Hong, Lee, Sungjoo·2015·ACS Nano

Abstract

We report the preparation of thickness-controlled few-layer black phosphorus (BP) films through the modulated plasma treatment of BP flakes. Not only does the plasma treatment control the thickness of the BP film, it also removes the chemical degradation of the exposed oxidized BP surface, which results in enhanced field-effect transistor (FET) performance. Our fabricated BP FETs were passivated with poly(methyl methacrylate) (PMMA) immediately after the plasma etching process. With these techniques, a high field-effect mobility was achieved, 1150 cm(2)/(V s), with an Ion/Ioff ratio of ∼10(5) at room temperature. Furthermore, a fabricated FET with plasma-treated few-layer BP that was passivated with PMMA was found to retain its I-V characteristics and thus to exhibit excellent environmental stability over several weeks.

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Metadata

Authors
Jia, J., Jang, S. K., Lai, S., Xu, J., Choi, Y. J., Park, J.-H., & Lee, S.
Venue
ACS Nano
Published
2015-08-31
Volume
9
Issue
9
Pages
8729-8736
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2413336263
Cited by
225
References
1
FWCI
8.53
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties. https://app.cochat.ai/papers/10.1021/acsnano.5b04265
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Jia, J., Jang, S. K., Lai, S., Xu, J., Choi, Y. J., Park, J.-H., & Lee, S. (2015). Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties. ACS Nano. https://doi.org/10.1021/acsnano.5b04265

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