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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures
Abstract
We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.
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Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
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Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
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Self-citationHuang, W., Gan, L., Yang, H., Zhou, N., Wang, R., Wu, W., Li, H., Ma, Y., Zeng, H., & Zhai, T. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201702448 · Cited by 267
Metadata
- Authors
- Zhang, K., Zhang, T., Cheng, G., Li, T., Wang, S., Wei, W., Zhou, X., Yu, W., Sun, Y., Wang, P., Zhang, D., Zeng, C., Wang, X., Hu, W., Fan, H. J., Shen, G., Chen, X., Duan, X., Chang, K., & Dai, N.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-03-09
- Volume
- 10
- Issue
- 3
- Pages
- 3852-3858
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2298614004
- Cited by
- 562
- References
- 1
- FWCI
- 25.76
- Type
- journal article
- Language
- en
- Open access
- closed
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