The DOI matches its Crossref record; 32 of the 32 references it cites were found in a registry or an index.
Enhanced Electronic Properties of SnO2 via Electron Transfer from Graphene Quantum Dots for Efficient Perovskite Solar Cells
Abstract
Tin dioxide (SnO 2 ) has been demonstrated as an effective electron-transporting layer (ETL) for attaining high-performance perovskite solar cells (PSCs). However, the numerous trap states in low-temperature solution processed SnO 2 will reduce the PSCs performance and result in serious hysteresis. Here, we report a strategy to improve the electronic properties in SnO 2 through a facile treatment of the films with adding a small amount of graphene quantum dots (GQDs). We demonstrate that the photogenerated electrons in GQDs can transfer to the conduction band of SnO 2 . The transferred electrons from the GQDs will effectively fill the electron traps as well as improve the conductivity of SnO 2, which is beneficial for improving the electron extraction efficiency and reducing the recombination at the ETLs/perovskite interface. The device fabricated with SnO 2:GQDs could reach an average power conversion efficiency (PCE) of 19.2 ± 1.0% and a highest steady-state PCE of 20.23% with very little hysteresis. Our study provides an effective way to enhance the performance of perovskite solar cells through improving the electronic properties of SnO 2 .
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Self-citation
Metadata
- Authors
- Xie, J., Huang, K., Yu, X., Yang, Z., Xiao, K., Qiang, Y., Zhu, X., Xu, L., Wang, P., Cui, C., & Yang, D.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-09-06
- Volume
- 11
- Issue
- 9
- Pages
- 9176-9182
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2753684966
- Cited by
- 365
- References
- 32
- FWCI
- 17.68
- Type
- journal article
- Language
- en
- Open access
- closed
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