Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction

Abstract

Two-dimensional (2D) materials present their excellent properties in electronic and optoelectronic applications, including in ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, flexibility, and the ability to confine electromagnetic energy to extremely small volumes. Herein, we demonstrate a photodetector with visible to near-infrared detection range, based on the heterojunction fabricated by van der Waals assembly between few-layer black phosphorus (BP) and few-layer molybdenum disulfide (MoS 2 ). The heterojunction with electrical characteristics which can be electrically tuned by a gate voltage achieves a wide range of current-rectifying behavior with a forward-to-reverse bias current ratio exceeding 10 3 . The photoresponsivity ( R ) of the photodetector is about 22.3 A W –1 measured at λ = 532 nm and 153.4 mA W –1 at λ = 1.55 μm with a microsecond response speed (15 μs). In addition, its specific detectivity D * is calculated to have the maximum values of 3.1 × 10 11 Jones at λ = 532 nm, while 2.13 × 10 9 Jones at λ = 1550 nm at room temperature.