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Cited by 207

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Preparation and Evaluation of Graphite Oxide Reduced at 220 °C

Zangmeister, Christopher D.·2010·Chemistry of Materials

Abstract

The reduction of graphite oxide (GO) thin films was evaluated at 220 °C using a combination of infrared (FTIR) and X-ray photoemission spectroscopies (XPS). The results were correlated with electrical resistance measurements. The chemical composition of GO was C 8 (OH) 3 O 0.8 and reduced to C 8 (OH) 0.5 O 0.3 after nearly 24 h of low-temperature processing, defined as 220 °C. The sheet resistance of dropcast GO thin films processed at 220 °C in air was 8 kΩ sq −1, similar to GO reduced at >800 °C in an inert atmosphere.

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Metadata

Authors
Zangmeister, C. D.
Venue
Chemistry of Materials
Published
2010-09-09
Volume
22
Issue
19
Pages
5625-5629
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
OpenAlex
W2332433553
Cited by
207
References
1
FWCI
7.72
Type
journal article
Language
en
Open access
closed

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