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Band Edge Electronic Structure of BiVO4: Elucidating the Role of the Bi s and V d Orbitals
Open accessAbstract
Abstract We report the first-principles electronic structure of BiVO4, a promising photocatalyst for hydrogen generation. BiVO4 is found to be a direct band gap semiconductor, despite having band extrema away from the Brillouin zone center. Coupling between Bi 6s and O 2p forces an upward dispersion of the valence band at the zone boundary; however, a direct gap is maintained via coupling between V 3d, O 2p, and Bi 6p, which lowers the conduction band minimum. These interactions result in symmetric hole and electron masses. Implications for the design of ambipolar metal oxides are discussed.
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Cites
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Semiconducting materials for photoelectrochemical energy conversion
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Metadata
- Authors
- Walsh, A., Yan, Y., Huda, M. N., Al-Jassim, M. M., & Wei, S.-H.
- Venue
- Chemistry of Materials
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-01-14
- Volume
- 21
- Issue
- 3
- Pages
- 547-551
- ISSN
- 0897-4756 (ISSN-L)
- 1520-5002
- OpenAlex
- W2009184047
- Cited by
- 734
- References
- 34
- FWCI
- 13.40
- Type
- journal article
- Language
- en
- Open access
- hybrid
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.