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Cited by 236

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Cross-Linked Polymer Gate Dielectric Films for Low-Voltage Organic Transistors

Roberts, Mark E., Queraltó, Núria, Mannsfeld, Stefan C. B., Reinecke, Benjamin N., Knoll, Wolfgang, Bao, Zhenan·2009·Chemistry of Materials

Abstract

Cross-linked polymer films were investigated as new gate dielectric materials for low-voltage thin-film transistors. Poly(4-vinylphenol) (PVP) was cross-linked through esterification reactions with commercially available bifunctional anhydrides, acyl chlorides, and carboxylic acids. The polymer dielectric films were evaluated based on surface morphology, capacitance, leakage current, and their compatibility with organic semiconductors. Thin insulating PVP films cross-linked with dianhydrides yielded a capacitance as high as 400 nF/cm 2 with leakage currents below 10 −8 A/cm 2 . Organic thin-film transistors (OTFTs) fabricated on these gate dielectric layers exhibited charge carrier mobilities as high as 3 cm 2 /(V s) for p-channel pentacene on octadecyltriethoxylsilane (OTS)-modified PVP and 0.045 cm 2 /(V s) for n-channel perfluorinated copper phthalocyanine (FCuPc).

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Metadata

Authors
Roberts, M. E., Queraltó, N., Mannsfeld, S. C. B., Reinecke, B. N., Knoll, W., & Bao, Z.
Venue
Chemistry of Materials
Published
2009-04-27
Volume
21
Issue
11
Pages
2292-2299
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
OpenAlex
W2087467580
Cited by
236
References
0
FWCI
11.09
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Cross-Linked Polymer Gate Dielectric Films for Low-Voltage Organic Transistors. https://app.cochat.ai/papers/10.1021/cm900637p
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Roberts, M. E., Queraltó, N., Mannsfeld, S. C. B., Reinecke, B. N., Knoll, W., & Bao, Z. (2009). Cross-Linked Polymer Gate Dielectric Films for Low-Voltage Organic Transistors. Chemistry of Materials. https://doi.org/10.1021/cm900637p

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