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Cited by 339

The DOI matches its Crossref record; 37 of the 37 references it cites were found in a registry or an index.

Solution−Liquid−Solid Growth of Semiconductor Nanowires

Wang, Fudong, Dong, Angang, Sun, Jianwei, Tang, Rui, Yu, Heng, Buhro, William E.·2006·Inorganic Chemistry

Abstract

The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.

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Metadata

Authors
Wang, F., Dong, A., Sun, J., Tang, R., Yu, H., & Buhro, W. E.
Venue
Inorganic Chemistry
Published
2006-09-01
Volume
45
Issue
19
Pages
7511-7521
ISSN
  • 0020-1669 (ISSN-L)
  • 1520-510X
OpenAlex
W2129279308
Cited by
339
References
37
FWCI
17.55
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Solution−Liquid−Solid Growth of Semiconductor Nanowires. https://app.cochat.ai/papers/10.1021/ic060498r
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Wang, F., Dong, A., Sun, J., Tang, R., Yu, H., & Buhro, W. E. (2006). Solution−Liquid−Solid Growth of Semiconductor Nanowires. Inorganic Chemistry. https://doi.org/10.1021/ic060498r

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