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High Electron Mobility in Ladder Polymer Field-Effect Transistors
Abstract
Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.
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Cited by
Electron Transport Materials for Organic Light-Emitting Diodes
Kulkarni, A. P., Tonzola, C. J., Babel, A., & Jenekhe, S. A. (2004) · Chemistry of Materials · doi:10.1021/cm049473l · Cited by 1,624
Self-citationSemiconductors for organic transistors
Facchetti, A. (2007) · Materials Today · doi:10.1016/s1369-7021(07)70017-2 · Cited by 874
Molecular Electronic Junctions
McCreery, R. L. (2004) · Chemistry of Materials · doi:10.1021/cm049517q · Cited by 555
Discotic Liquid Crystals for Opto-Electronic Applications
Kaafarani, B. R. (2011) · Chemistry of Materials · doi:10.1021/cm102117c · Cited by 513
Metadata
- Authors
- Babel, A., & Jenekhe, S. A.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2003-10-16
- Volume
- 125
- Issue
- 45
- Pages
- 13656-13657
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2019416146
- Cited by
- 545
- References
- 0
- FWCI
- 23.46
- Type
- journal article
- Language
- en
- Open access
- closed
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- Babel, A., & Jenekhe, S. A. (2003). High Electron Mobility in Ladder Polymer Field-Effect Transistors. Journal of the American Chemical Society. https://doi.org/10.1021/ja0371810
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