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Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates
Abstract
Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.
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Citations
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Metadata
- Authors
- Wang, Song, Li, P., Ryou, J. H., Dupuis, R. D., Summers, C. J., & Wang, Z. L.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2005-05-07
- Volume
- 127
- Issue
- 21
- Pages
- 7920-7923
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2015616435
- Cited by
- 244
- References
- 0
- FWCI
- 15.52
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, Song, Li, P., Ryou, J. H., Dupuis, R. D., Summers, C. J., & Wang, Z. L. (2005). Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates. Journal of the American Chemical Society. https://doi.org/10.1021/ja050807x
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