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Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties

He, Jr H., Lao, Chang S., Chen, Lih J., Davidovic, Dragomir, Wang, Zhong L.·2005·Journal of the American Chemical Society

Abstract

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

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Metadata

Authors
He, J. H., Lao, C. S., Chen, L. J., Davidovic, D., & Wang, Z. L.
Venue
Journal of the American Chemical Society
Published
2005-11-02
Volume
127
Issue
47
Pages
16376-16377
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2029601485
Cited by
240
References
0
FWCI
11.09
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties. https://app.cochat.ai/papers/10.1021/ja0559193
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He, J. H., Lao, C. S., Chen, L. J., Davidovic, D., & Wang, Z. L. (2005). Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties. Journal of the American Chemical Society. https://doi.org/10.1021/ja0559193

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.