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Ion Gel Gated Polymer Thin-Film Transistors

Lee, Jiyoul, Panzer, Matthew J., He, Yiyong, Lodge, Timothy P., Frisbie, C. Daniel·2007·Journal of the American Chemical Society

Abstract

We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm 2 at 10 Hz and 2 μF/cm 2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).

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Metadata

Authors
Lee, J., Panzer, M. J., He, Y., Lodge, T. P., & Frisbie, C. D.
Venue
Journal of the American Chemical Society
Published
2007-03-24
Volume
129
Issue
15
Pages
4532-4533
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2036604647
Cited by
460
References
0
FWCI
23.94
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.