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Cited by 597

The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.

Surface Transfer p-Type Doping of Epitaxial Graphene

Chen, Wei, Chen, Shi, Qi, Dong Chen, Gao, Xing Yu, Wee, Andrew Thye Shen·2007·Journal of the American Chemical Society

Abstract

Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.

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Metadata

Authors
Chen, W., Chen, S., Qi, D. C., Gao, X. Y., & Wee, A. T. S.
Venue
Journal of the American Chemical Society
Published
2007-08-01
Volume
129
Issue
34
Pages
10418-10422
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W1964391885
Cited by
597
References
4
FWCI
14.08
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Surface Transfer p-Type Doping of Epitaxial Graphene. https://app.cochat.ai/papers/10.1021/ja071658g
The paper
Chen, W., Chen, S., Qi, D. C., Gao, X. Y., & Wee, A. T. S. (2007). Surface Transfer p-Type Doping of Epitaxial Graphene. Journal of the American Chemical Society. https://doi.org/10.1021/ja071658g

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.