The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Use of a 1 H-Benzoimidazole Derivative as an n-Type Dopant and To Enable Air-Stable Solution-Processed n-Channel Organic Thin-Film Transistors
Abstract
We present here the development of a new solution-processable n-type dopant, N-DMBI. Our experimental results demonstrated that a well-known n-channel semiconductor, [6,6]-phenyl C(61) butyric acid methyl ester (PCBM), can be effectively doped with N-DMBI by solution processing; the film conductivity is significantly increased by n-type doping. We utilized this n-type doping for the first time to improve the air-stability of n-channel organic thin-film transistors, in which the doping can compensate for the electron traps. Our successful demonstration of n-type doping using N-DMBI opens up new opportunities for the development of air-stable n-channel semiconductors. It is also potentially useful for application on solution-processed organic light-emitting diodes and organic photovoltaics.
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Contents: (Adv. Mater. 8/2010)
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Metadata
- Authors
- Wei, P., Oh, J. H., Dong, G., & Bao, Z.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-06-16
- Volume
- 132
- Issue
- 26
- Pages
- 8852-8853
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2008574253
- Cited by
- 419
- References
- 14
- FWCI
- 11.46
- Type
- journal article
- Language
- en
- Open access
- closed
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