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Cited by 388

The DOI matches its Crossref record; 25 of the 25 references it cites were found in a registry or an index.

Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping

Wu, Di, Zhao, Li-Dong, Hao, Shiqiang, Jiang, Qike, Zheng, Fengshan, Doak, Jeff W., Wu, Haijun, Chi, Hang, Gelbstein, Y., Uher, C., Wolverton, C., Kanatzidis, Mercouri, He, Jiaqing·2014·Journal of the American Chemical Society

Abstract

As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely through hole carrier concentration tuning. In this report, we show that a remarkably high ZT of ∼1.9 can be achieved at 773 K in Ge0.87Pb0.13Te upon the introduction of 3 mol % Bi2Te3. Bismuth telluride promotes the solubility of PbTe in the GeTe matrix, thus leading to a significantly reduced thermal conductivity. At the same time, it enhances the thermopower by activating a much higher fraction of charge transport from the highly degenerate Σ valence band, as evidenced by density functional theory calculations. These mechanisms are incorporated and discussed in a three-band (L + Σ + C) model and are found to explain the experimental results well. Analysis of the detailed microstructure (including rhombohedral twin structures) in Ge0.87Pb0.13Te + 3 mol % Bi2Te3 was carried out using transmission electron microscopy and crystallographic group theory. The complex microstructure explains the reduced lattice thermal conductivity and electrical conductivity as well.

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Crossref · 10.1021/ja504896a

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Metadata

Authors
Wu, D., Zhao, L.-D., Hao, S., Jiang, Q., Zheng, F., Doak, J. W., Wu, H., Chi, H., Gelbstein, Y., Uher, C., Wolverton, C., Kanatzidis, M., & He, J.
Venue
Journal of the American Chemical Society
Published
2014-08-04
Volume
136
Issue
32
Pages
11412-11419
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2331081388
Cited by
388
References
25
FWCI
11.61
Type
journal article
Language
en
Open access
closed

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