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Cited by 174

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Controlling the Metal to Semiconductor Transition of MoS2 and WS2 in Solution

Open access
Chou, Stanley S., Huang, Yi-Kai, Kim, Jaemyung, Kaehr, Bryan, Foley, Brian M., Lu, Ping, Dykstra, Conner, Hopkins, Patrick E., Brinker, C. Jeffrey, Huang, Jiaxing, Dravid, Vinayak P.·2015·Journal of the American Chemical Society

Abstract

Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. Here, we report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. This process connects the scalability of chemical exfoliation with the simplicity of solution processing, ultimately enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.

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Crossref · 10.1021/ja5107145

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Metadata

Authors
Chou, S. S., Huang, Y.-K., Kim, J., Kaehr, B., Foley, B. M., Lu, P., Dykstra, C., Hopkins, P. E., Brinker, C. J., Huang, J., & Dravid, V. P.
Venue
Journal of the American Chemical Society
Published
2015-02-03
Volume
137
Issue
5
Pages
1742-1745
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2065692855
Cited by
174
References
1
FWCI
10.26
Type
journal article
Language
en
Open access
green

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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