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Doping and Electrical Transport in Silicon Nanowires
Abstract
Single-crystal n-type and p-type silicon nanowires (SiNWs) have been prepared and characterized by electrical transport measurements. Laser catalytic growth was used to introduce controllably either boron or phosphorus dopants during the vapor phase growth of SiNWs. Two-terminal, gate-dependent measurements made on individual boron-doped and phosphorus-doped SiNWs show that these materials behave as p-type and n-type materials, respectively. Estimates of the carrier mobility made from gate-dependent transport measurements are consistent with diffusive transport. In addition, these studies show it is possible to heavily dope SiNWs and approach a metallic regime. Temperature-dependent measurements made on heavily doped SiNWs show no evidence for Coulomb blockade at temperatures down to 4.2 K, and thus testify to the structural and electronic uniformity of the SiNWs. Potential applications of the doped SiNWs are discussed.
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Cited by
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Xia, Y., Yang, P., Sun, Y., Wu, Y., Mayers, B., Gates, B., Yin, Y., Kim, F., & Yan, H. (2003) · Advanced Materials · doi:10.1002/adma.200390087 · Cited by 8,559
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
Duan, X., Huang, Y., Cui, Y., Wang, J., & Lieber, C. M. (2001) · Nature · doi:10.1038/35051047 · Cited by 3,354
Self-citationFunctional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
Cui, Y., & Lieber, C. M. (2001) · Science · doi:10.1126/science.291.5505.851 · Cited by 3,258
Self-citationGrowth of nanowire superlattice structures for nanoscale photonics and electronics
Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. C., & Lieber, C. M. (2002) · Nature · doi:10.1038/415617a · Cited by 2,709
Self-citationNanowire electronic and optoelectronic devices
Li, Y., Qian, F., Xiang, J., & Lieber, C. M. (2006) · Materials Today · doi:10.1016/s1369-7021(06)71650-9 · Cited by 1,376
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Metadata
- Authors
- Cui, Y., Duan, X., Hu, J., & Lieber, C. M.
- Venue
- The Journal of Physical Chemistry B
- Publisher
- American Chemical Society (ACS)
- Published
- 2000-05-11
- Volume
- 104
- Issue
- 22
- Pages
- 5213-5216
- ISSN
- 1520-5207 (ISSN-L)
- 1520-6106
- OpenAlex
- W2951062193
- Cited by
- 950
- References
- 0
- FWCI
- 26.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cui, Y., Duan, X., Hu, J., & Lieber, C. M. (2000). Doping and Electrical Transport in Silicon Nanowires. The Journal of Physical Chemistry B. https://doi.org/10.1021/jp0009305
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