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ZnO Nanowire Transistors
Abstract
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off current ratios ranging from 10(5) to 10(7). Four probe measurements show that the resistivity of the Ti/Au-ZnO contacts is 0.002-0.02 Omega.cm. The performance characteristics of the nanowire transistors are intimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects.
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Cites
Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires
Duan, X., Huang, Y., & Lieber, C. M. (2002) · Nano Letters · doi:10.1021/nl025532n · Cited by 346
Cited by
Fiber Supercapacitors Made of Nanowire‐Fiber Hybrid Structures for Wearable/Flexible Energy Storage
Bae, J., Song, M. K., Park, Y. J., Kim, J. M., Liu, M., & Wang, Z. L. (2011) · Angewandte Chemie International Edition · doi:10.1002/anie.201006062 · Cited by 854
Solution-Grown Zinc Oxide Nanowires
Greene, L. E., Yuhas, B. D., Law, M., Zitoun, D., & Yang, P. (2006) · Inorganic Chemistry · doi:10.1021/ic0601900 · Cited by 688
Self-citationMultilayered ZnO Nanosheets with 3D Porous Architectures: Synthesis and Gas Sensing Application
Li, J., Fan, H., & Jia, X. (2010) · The Journal of Physical Chemistry C · doi:10.1021/jp100792c · Cited by 323
Metadata
- Authors
- Goldberger, J., Sirbuly, D. J., Law, M., & Yang, P.
- Venue
- The Journal of Physical Chemistry B
- Publisher
- American Chemical Society (ACS)
- Published
- 2004-12-13
- Volume
- 109
- Issue
- 1
- Pages
- 9-14
- ISSN
- 1520-5207 (ISSN-L)
- 1520-6106
- OpenAlex
- W2118399042
- Cited by
- 593
- References
- 1
- FWCI
- 17.08
- Type
- journal article
- Language
- en
- Open access
- closed
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- Goldberger, J., Sirbuly, D. J., Law, M., & Yang, P. (2005). ZnO Nanowire Transistors. The Journal of Physical Chemistry B. https://doi.org/10.1021/jp0452599
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