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Cited by 541

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Functionalization of Single-Layer MoS2 Honeycomb Structures

Open access
Ataca, C., Ciraci, S.·2011·The Journal of Physical Chemistry C

Abstract

Based on first-principles plane-wave calculations, we studied the functionalization of the two-dimensional single-layer MoS 2 structure through adatom adsorption and vacancy defect creation. Minimum-energy adsorption sites were determined for 16 different adatoms, each of which gives rise to diverse properties. Bare, single-layer MoS 2, which is normally a nonmagnetic, direct-band-gap semiconductor, attains a net magnetic moment upon adsorption of specific transition-metal atoms, as well as silicon and germanium atoms. The localized donor and acceptor states in the band gap expand the utilization of MoS 2 in nanoelectronics and spintronics. Specific adatoms, such as C and O, attain significant excess charge upon adsorption onto single-layer MoS 2, which might be useful for tribological applications. Each MoS 2 triple vacancy created in a single layer of MoS 2 gives rise to a net magnetic moment, whereas other vacancy defects related to Mo and S atoms do not influence the nonmagnetic ground state. The present results are also relevant for the surface of graphitic MoS 2 .

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Crossref · 10.1021/jp2000442

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Metadata

Authors
Ataca, C., & Ciraci, S.
Venue
The Journal of Physical Chemistry C
Published
2011-06-22
Volume
115
Issue
27
Pages
13303-13311
ISSN
  • 1932-7447 (ISSN-L)
  • 1932-7455
OpenAlex
W2028181954
Cited by
541
References
7
FWCI
15.96
Type
journal article
Language
en
Open access
green

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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