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Selective Adsorption of Thiol Molecules at Sulfur Vacancies on MoS2(0001), Followed by Vacancy Repair via S–C Dissociation

Makarova, Marina, Okawa, Yuji, Aono, Masakazu·2012·The Journal of Physical Chemistry C

Abstract

For the development of various molecular nanostructures such as single-molecule electronic circuits, it is very important to fix the molecular components at predetermined positions on a substrate. We report the fixation of the thiol derivatives dodecanethiol and (3-mercaptopropyl)trimethoxysilane (MPS) on a MoS 2 (0001) substrate at prefabricated sulfur vacancies. Scanning tunneling microscopy (STM) reveals the selective bonding of thiol groups to the Mo atoms at the vacancy defects. In addition, we report STM tip-induced dissociation of the S–C bond, which essentially results in the repair of the vacancy defects with sulfur atoms from the thiols. This is consistent with the high desulfurization reactivity of MoS 2 . Because of its structure and composition, MPS has a higher dissociation reactivity than that of dodecanethiol.

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Metadata

Authors
Makarova, M., Okawa, Y., & Aono, M.
Venue
The Journal of Physical Chemistry C
Published
2012-10-11
Volume
116
Issue
42
Pages
22411-22416
ISSN
  • 1932-7447 (ISSN-L)
  • 1932-7455
OpenAlex
W2321207938
Cited by
163
References
0
FWCI
2.44
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Selective Adsorption of Thiol Molecules at Sulfur Vacancies on MoS2(0001), Followed by Vacancy Repair via S–C Dissociation. https://app.cochat.ai/papers/10.1021/jp307267h
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Makarova, M., Okawa, Y., & Aono, M. (2012). Selective Adsorption of Thiol Molecules at Sulfur Vacancies on MoS2(0001), Followed by Vacancy Repair via S–C Dissociation. The Journal of Physical Chemistry C. https://doi.org/10.1021/jp307267h

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