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Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application

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Le, Duy, Rawal, Takat B., Rahman, Talat S.·2014·The Journal of Physical Chemistry C

Abstract

Single-layer MoS 2 is proving to be a versatile material for a wide variety of electronic, optical, and chemical applications. Sulfur depletion, without destabilization of the single layer, is considered a prudent way for making the basal plane of the layer catalytically active. Based on the results of our density-functional-theory examination of vacancy structures on one side of an MoS 2 layer, we show that the formation energy per sulfur vacancy is the lowest (energetically favorable) when the vacancies form a row and that the longer the row, the lower the formation energy. In addition, we find that the lowest energy barrier for the diffusion of sulfur vacancy at the row structures through the exchange of a vacancy with a nearby sulfur atom is 0.79 eV and that this barrier increases as the row elongates. We also evaluate the propensity for catalytic activity of an MoS 2 layer with two types of sulfur-vacancy structures (row and patch) and find the energetics for alcohol synthesis from syngas to be more favorable for the layer with a sulfur-vacancy patch.

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Metadata

Authors
Le, D., Rawal, T. B., & Rahman, T. S.
Venue
The Journal of Physical Chemistry C
Published
2014-03-03
Volume
118
Issue
10
Pages
5346-5351
ISSN
  • 1932-7447 (ISSN-L)
  • 1932-7455
OpenAlex
W2322767323
Cited by
296
References
4
FWCI
8.19
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application. https://app.cochat.ai/papers/10.1021/jp411256g
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Le, D., Rawal, T. B., & Rahman, T. S. (2014). Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application. The Journal of Physical Chemistry C. https://doi.org/10.1021/jp411256g

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