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Cited by 192

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Dye Capped Semiconductor Nanoclusters. Role of Back Electron Transfer in the Photosensitization of SnO2 Nanocrystallites with Cresyl Violet Aggregates

Liu, Di, Fessenden, Richard W., Hug, Gordon L., Kamat, Prashant V.·1997·The Journal of Physical Chemistry B

Abstract

Adsorption of a cationic dye, cresyl violet, on SnO 2 and SiO 2 nanoclusters and nanocrystalline thin films results in the formation of H-aggregates. These dyes are photochemically and electrochemically active and extend the photoresponse of large bandgap semiconductors such as SnO 2 . Photocurrent generation in dye capped nanocrystalline films of SnO 2 has been demonstrated with visible light excitation. A photon-to-photocurrent generation efficiency around 1% has been observed at 510 nm. Back electron transfer between the photoinjected electron and the oxidized sensitizer plays an important role in controlling the efficiency of net electron transfer. Transient absorption and microwave absorption measurements of the dye aggregate capped SnO 2 films suggest that the back electron transfer is multiexponential and most is completed within a few hundred nanoseconds. The activation energy of the back electron transfer process is very low (∼1.7 kJ/mol).

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Metadata

Authors
Liu, D., Fessenden, R. W., Hug, G. L., & Kamat, P. V.
Venue
The Journal of Physical Chemistry B
Published
1997-04-01
Volume
101
Issue
14
Pages
2583-2590
ISSN
  • 1520-5207 (ISSN-L)
  • 1520-6106
OpenAlex
W2076485619
Cited by
192
References
1
FWCI
7.96
Type
journal article
Language
en
Open access
closed

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