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Cited by 380

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Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition

Zhang, Yi, Gomez, Lewis, Ishikawa, Fumiaki N., Madaria, Anuj, Ryu, Koungmin, Wang, Chuan, Badmaev, Alexander, Zhou, Chongwu·2010·The Journal of Physical Chemistry Letters

Abstract

We report a comparative study and Raman characterization of the formation of graphene on single crystal Ni (111) and polycrystalline Ni substrates using chemical vapor deposition (CVD). Preferential formation of monolayer/bilayer graphene on the single crystal surface is attributed to its atomically smooth surface and the absence of grain boundaries. In contrast, CVD graphene formed on polycrystalline Ni leads to a higher percentage of multilayer graphene (≥3 layers), which is attributed to the presence of grain boundaries in Ni that can serve as nucleation sites for multilayer growth. Micro-Raman surface mapping reveals that the area percentages of monolayer/bilayer graphene are 91.4% for the Ni (111) substrate and 72.8% for the polycrystalline Ni substrate under comparable CVD conditions. The use of single crystal substrates for graphene growth may open ways for uniform high-quality graphene over large areas.

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Metadata

Authors
Zhang, Y., Gomez, L., Ishikawa, F. N., Madaria, A., Ryu, K., Wang, C., Badmaev, A., & Zhou, C.
Venue
The Journal of Physical Chemistry Letters
Published
2010-10-11
Volume
1
Issue
20
Pages
3101-3107
ISSN
1948-7185 (ISSN-L)
OpenAlex
W2169740682
Cited by
380
References
2
FWCI
12.36
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition. https://app.cochat.ai/papers/10.1021/jz1011466
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Zhang, Y., Gomez, L., Ishikawa, F. N., Madaria, A., Ryu, K., Wang, C., Badmaev, A., & Zhou, C. (2010). Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition. The Journal of Physical Chemistry Letters. https://doi.org/10.1021/jz1011466

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