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Accurate Band Gaps for Semiconductors from Density Functional Theory

Xiao, Hai, Tahir-Kheli, Jamil, Goddard, William A.·2011·The Journal of Physical Chemistry Letters

Abstract

An essential issue in developing semiconductor devices for photovoltaics and thermoelectrics is to design materials with appropriate band gaps plus the proper positioning of dopant levels relative to the bands. Local density (LDA) and generalized gradient approximation (GGA) density functionals generally underestimate band gaps for semiconductors and sometimes incorrectly predict a metal. Hybrid functionals that include some exact Hartree−Fock exchange are known to be better. We show here for CuInSe 2, the parent compound of the promising CIGS Cu(In x Ga 1− x )Se 2 solar devices, that LDA and GGA obtain gaps of 0.0−0.01 eV (experiment is 1.04 eV), while the historically first global hybrid functional, B3PW91, is surprisingly better than B3LYP with band gaps of 1.07 and 0.95 eV, respectively. Furthermore, we show that for 27 related binary and ternary semiconductors, B3PW91 predicts gaps with a mean average deviation (MAD) of only 0.09 eV, which is substantially better than all modern hybrid functionals.

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Metadata

Authors
Xiao, H., Tahir-Kheli, J., & Goddard, W. A.
Venue
The Journal of Physical Chemistry Letters
Published
2011-01-18
Volume
2
Issue
3
Pages
212-217
ISSN
1948-7185 (ISSN-L)
OpenAlex
W2061056394
Cited by
644
References
4
FWCI
14.77
Type
journal article
Language
en
Open access
closed

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