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Metallic Contact Formation for Molecular Electronics: Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols

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de Boer, Bert, Frank, Martin M., Chabal, Yves J., Jiang, Weirong, Garfunkel, Eric, Bao, Zhenan·2004·Langmuir

Abstract

We present grazing-incidence Fourier transform infrared and AFM data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols. SAMs of 4,4'''-dimercapto-p-quaterphenyl, 4,4"-dimercapto-p-terphenyl, and 4,4'-dimercapto-p-biphenyl have reactive thiols at the SAM/vacuum interface that interact with vapor-deposited Au or Al atoms, preventing metal penetration. Conjugated monothiols lack such metal blocking groups, and metals (Au, Al) can penetrate into their SAMs. Vapor deposition of Ti onto conjugated mono- and dithiol SAMs and onto hexadecanethiol SAMs destroys the monolayers.

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Metadata

Authors
de Boer, B., Frank, M. M., Chabal, Y. J., Jiang, W., Garfunkel, E., & Bao, Z.
Venue
Langmuir
Published
2004-01-27
Volume
20
Issue
5
Pages
1539-1542
ISSN
  • 0743-7463 (ISSN-L)
  • 1520-5827
OpenAlex
W2024712098
Cited by
194
References
0
FWCI
22.56
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Metallic Contact Formation for Molecular Electronics: Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols. https://app.cochat.ai/papers/10.1021/la0356349
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de Boer, B., Frank, M. M., Chabal, Y. J., Jiang, W., Garfunkel, E., & Bao, Z. (2004). Metallic Contact Formation for Molecular Electronics: Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols. Langmuir. https://doi.org/10.1021/la0356349

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