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Cited by 252

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Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes

Joselevich, Ernesto, Lieber, Charles M.·2002·Nano Letters

Abstract

A new approach for vectorial growth of single-wall carbon nanotube arrays is presented. The origin of growth is defined by patterning the catalyst nanoparticles, while the direction of growth is defined by a local electric field parallel to the substrate. Statistical analysis of the nanotube angular distribution indicates that field-directed growth can discriminate between metallic and semiconducting nanotubes during their formation. Vectorial growth could be used to produce nanotube-based circuitry for molecular electronics.

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Metadata

Authors
Joselevich, E., & Lieber, C. M.
Venue
Nano Letters
Published
2002-08-30
Volume
2
Issue
10
Pages
1137-1141
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2159950533
Cited by
252
References
0
FWCI
12.87
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes. https://app.cochat.ai/papers/10.1021/nl025642u
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Joselevich, E., & Lieber, C. M. (2002). Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes. Nano Letters. https://doi.org/10.1021/nl025642u

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.