High Performance Silicon Nanowire Field Effect Transistors

Abstract

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon nanowire transistors, we have examined the influence of source-drain contact thermal annealing and surface passivation on key transistor properties. Thermal annealing and passivation of oxide defects using chemical modification were found to increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V·s with peak values of 2000 nS and 1350 cm 2 /V·s, respectively. The comparison of these results and other key parameters with state-of-the-art planar silicon devices shows substantial advantages for silicon nanowires. The uses of nanowires as building blocks for future nanoelectronics are discussed.