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Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

Zhong, Zhaohui, Qian, Fang, Wang, Deli, Lieber, Charles M.·2003·Nano Letters

Abstract

Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c -plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies demonstrated that the nanowires had single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy. Individual magnesium-doped gallium nitride nanowires configured as field-effect transistors exhibited systematic variations in two-terminal resistance as a function of magnesium dopant incorporation, and gate-dependent conductance measurements demonstrated that optimally doped nanowires were p-type with hole mobilities of ca. 12 cm 2 /V·s. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p−n diodes. In forward bias, the p−n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. The new synthesis of p-type gallium nitride nanowire building blocks opens up significant potential for the assembly of nanoscale electronics and photonics.

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Metadata

Authors
Zhong, Z., Qian, F., Wang, D., & Lieber, C. M.
Venue
Nano Letters
Published
2003-02-20
Volume
3
Issue
3
Pages
343-346
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2162425471
Cited by
469
References
0
FWCI
21.50
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices. https://app.cochat.ai/papers/10.1021/nl034003w
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Zhong, Z., Qian, F., Wang, D., & Lieber, C. M. (2003). Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices. Nano Letters. https://doi.org/10.1021/nl034003w

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