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Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography

Jung, Gun-Young, Johnston-Halperin, Ezekiel, Wu, Wei, Yu, Zhaoning, Wang, Shih-Yuan, Tong, William M., Li, Zhiyong, Green, Jonathan E., Sheriff, Bonnie A., Boukai, Akram, Bunimovich, Yuri, Heath, James R., Williams, R. Stanley·2006·Nano Letters

Abstract

High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.

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Metadata

Authors
Jung, G.-Y., Johnston-Halperin, E., Wu, W., Yu, Z., Wang, S.-Y., Tong, W. M., Li, Z., Green, J. E., Sheriff, B. A., Boukai, A., Bunimovich, Y., Heath, J. R., & Williams, R. S.
Venue
Nano Letters
Published
2006-02-04
Volume
6
Issue
3
Pages
351-354
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2014286544
Cited by
172
References
0
FWCI
19.01
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography. https://app.cochat.ai/papers/10.1021/nl052110f
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Jung, G.-Y., Johnston-Halperin, E., Wu, W., Yu, Z., Wang, S.-Y., Tong, W. M., Li, Z., Green, J. E., Sheriff, B. A., Boukai, A., Bunimovich, Y., Heath, J. R., & Williams, R. S. (2006). Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography. Nano Letters. https://doi.org/10.1021/nl052110f

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