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Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer
Abstract
We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm 2 /V-s, respectively, and a maximum drive-current of 1.7 mA/μm (at V DS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.
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Cited by
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Núñez, C. G., Navaraj, W. T., Polat, E. O., & Dahiya, R. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201606287 · Cited by 312
Trung, T. Q., Ramasundaram, S., & Lee, N. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201404582 · Cited by 33
Metadata
- Authors
- Liang, X., Fu, Z., & Chou, S. Y.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2007-11-14
- Volume
- 7
- Issue
- 12
- Pages
- 3840-3844
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2034172706
- Cited by
- 360
- References
- 0
- FWCI
- 13.16
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liang, X., Fu, Z., & Chou, S. Y. (2007). Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer. Nano Letters. https://doi.org/10.1021/nl072566s
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