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Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

Open access
Liao, Lei, Bai, Jingwei, Cheng, Rui, Lin, Yung-Chen, Jiang, Shan, Huang, Yu, Duan, Xiangfeng·2010·Nano Letters

Abstract

The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.

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Metadata

Authors
Liao, L., Bai, J., Cheng, R., Lin, Y.-C., Jiang, S., Huang, Y., & Duan, X.
Venue
Nano Letters
Published
2010-04-09
Volume
10
Issue
5
Pages
1917-1921
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1991809805
Cited by
174
References
3
FWCI
10.81
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics. https://app.cochat.ai/papers/10.1021/nl100840z
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Liao, L., Bai, J., Cheng, R., Lin, Y.-C., Jiang, S., Huang, Y., & Duan, X. (2010). Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics. Nano Letters. https://doi.org/10.1021/nl100840z

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